R+O · FETs & Power MOSFETs · MPN HT10N550S
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| Gate Charge(Qg) | 62.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 2.6W |
| RDS(on) | 30mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.245nF |
100V 10A 1.8V 2.6W 30mΩ@10V 1 N-channel SOT-223 Single FETs, MOSFETs RoHS