R+O · FETs & Power MOSFETs · MPN HT10N1H2S
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 53pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 75mΩ@10V;90mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.22nF |
| Type | N-Channel |
N-Channel 100V 4A 2.5W Surface Mount SOT-223