R+O HT06P900S

R+O · FETs & Power MOSFETs · MPN HT06P900S

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Specifications

Gate Charge(Qg)15.8nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)77.7pF
RDS(on)53mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.153nF
TypeP-Channel

Technical details

P-Channel 60V 5A 3.1W Surface Mount SOT-223

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