R+O HT06P460S

R+O · FETs & Power MOSFETs · MPN HT06P460S

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)37.6nC@10V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)26mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.15nF
TypeP-Channel

Technical details

P-Channel 60V 8A 3W Surface Mount SOT-223

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