R+O · FETs & Power MOSFETs · MPN HT06P1H7S
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| Gate Charge(Qg) | 9nC |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.7W |
| RDS(on) | 92mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.2nF |
| Type | P-Channel |
P-Channel 60V 2A 1.7W Surface Mount SOT-223