R+O HT06P1H7S

R+O · FETs & Power MOSFETs · MPN HT06P1H7S

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Specifications

Gate Charge(Qg)9nC
Drain to Source Voltage60V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.7W
RDS(on)92mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)42pF
Number1 P-Channel
Input Capacitance(Ciss)1.2nF
TypeP-Channel

Technical details

P-Channel 60V 2A 1.7W Surface Mount SOT-223

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