R+O · FETs & Power MOSFETs · MPN HT06P1H3S
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 4.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 90mΩ@10V;125mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1nF |
| Type | P-Channel |
P-Channel 60V 4.3A 3.1W Surface Mount SOT-223