R+O · FETs & Power MOSFETs · MPN HT06N840S
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| Gate Charge(Qg) | 14.6nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 84mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 310pF |
60V 3A 1.3V 1.7W 84mΩ@10V 1 N-channel SOT-223 Single FETs, MOSFETs RoHS