R+O HT06N780S

R+O · FETs & Power MOSFETs · MPN HT06N780S

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Specifications

Gate Charge(Qg)14.6nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)34pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)38mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)510pF
TypeN-Channel

Technical details

N-Channel 60V 4A 1.7W Surface Mount SOT-223

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