R+O HT04N200S

R+O · FETs & Power MOSFETs · MPN HT04N200S

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)26nC@10V
Output Capacitance(Coss)121pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)111pF
RDS(on)11mΩ@10V;13mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

N-Channel 40V 9A 2W Surface Mount SOT-223

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