R+O HT02P260S

R+O · FETs & Power MOSFETs · MPN HT02P260S

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)30nC@5V
Output Capacitance(Coss)520pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)480pF
RDS(on)16mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.67nF
TypeP-Channel

Technical details

P-Channel 20V 10A 2.8W Surface Mount SOT-223

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