R+O · FETs & Power MOSFETs · MPN HP806P550S
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| Gate Charge(Qg) | 58.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 169pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 156pF |
| RDS(on) | 27mΩ@10V;34mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.05nF |
| Type | P-Channel |
P-Channel 60V 8A 3.1W Surface Mount SOP-8