R+O HP804C360D

R+O · FETs & Power MOSFETs · MPN HP804C360D

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Specifications

Gate Charge(Qg)20.9nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)100pF;121pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)21mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)908pF
TypeN-Channel + P-Channel

Technical details

40V 8A 1.6V 1.4W 21mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS

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