R+O HP803P180S

R+O · FETs & Power MOSFETs · MPN HP803P180S

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Specifications

Gate Charge(Qg)51.4nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)335pF
RDS(on)8.4mΩ@10V;12.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.766nF
TypeP-Channel

Technical details

P-Channel 30V 12A 1.6W Surface Mount SOP-8

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