R+O HP803N180D

R+O · FETs & Power MOSFETs · MPN HP803N180D

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)22.9nC@10V
Output Capacitance(Coss)145pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.25W
RDS(on)15mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)130pF
Number2 N-Channel
Input Capacitance(Ciss)968pF

Technical details

30V 10A 1.6V 1.25W 15mΩ@10V 2 N-Channel SOP-8 Single FETs, MOSFETs RoHS

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