R+O HP803N110S

R+O · FETs & Power MOSFETs · MPN HP803N110S

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)41.2nC@10V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation3.1W
RDS(on)4.5mΩ@10V;6mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)280pF
Number1 N-channel
Input Capacitance(Ciss)2.987nF
TypeN-Channel

Technical details

N-Channel 30V 18A 3.1W Surface Mount SOP-8

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