R+O HP803N100S

R+O · FETs & Power MOSFETs · MPN HP803N100S

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)30.3nC@10V
Output Capacitance(Coss)210pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)158pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.497nF
TypeN-Channel

Technical details

N-Channel 30V 15A 2.1W Surface Mount SOP-8

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