R+O HP803N045S

R+O · FETs & Power MOSFETs · MPN HP803N045S

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)40.8nC@10V
Output Capacitance(Coss)1.955nF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation3W
RDS(on)3.2mΩ@10V;4mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)397pF
Number1 N-channel
Input Capacitance(Ciss)2.77nF
TypeN-Channel

Technical details

N-Channel 30V 25A 3W Surface Mount SOP-8

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