R+O HL6402W6

R+O · FETs & Power MOSFETs · MPN HL6402W6

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)5.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
RDS(on)19mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)64pF
Number1 N-channel
Input Capacitance(Ciss)625pF

Technical details

30V 5.6A 1.5V 1.2W 19mΩ@10V 1 N-channel SOT-23-6L Single FETs, MOSFETs RoHS

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