R+O HL6401W6

R+O · FETs & Power MOSFETs · MPN HL6401W6

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)22nC@10V
Current - Continuous Drain(Id)4.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation1.2W
RDS(on)60mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)68pF
Number1 P-Channel
Input Capacitance(Ciss)1.04nF

Technical details

30V 4.4A 900mV 1.2W 60mΩ@10V 1 P-Channel SOT-23-6L Single FETs, MOSFETs RoHS

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