R+O HL5N10

R+O · FETs & Power MOSFETs · MPN HL5N10

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Specifications

Configuration-
Gate Charge(Qg)4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)100mΩ@10V
Number-
Input Capacitance(Ciss)218pF

Technical details

100V 5A 1.6V 1.4W 100mΩ@10V N-Channel SOT-23 Single FETs, MOSFETs RoHS

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