R+O · FETs & Power MOSFETs · MPN HL4P06W
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| RDS(on) | 110mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.173nF |
60V 4A 1.8V 1.5W 110mΩ@10V 1 P-Channel SOT-23-3L Single FETs, MOSFETs RoHS