R+O · FETs & Power MOSFETs · MPN HL4N10W
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| Gate Charge(Qg) | 3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.65V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 100mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 210pF |
100V 4A 1.65V 1.5W 100mΩ@10V 1 N-channel SOT-23-3L Single FETs, MOSFETs RoHS