R+O · FETs & Power MOSFETs · MPN HL3N10
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 4nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 3.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.65V |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 100mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 210pF |
100V 3.3A 1.65V 1.4W 100mΩ@10V N-Channel SOT-23 Single FETs, MOSFETs RoHS