R+O HL3416

R+O · FETs & Power MOSFETs · MPN HL3416

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Specifications

Gate Charge(Qg)11nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)133pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))620mV
Pd - Power Dissipation1.3W
RDS(on)16mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)120pF
Number1 N-channel
Input Capacitance(Ciss)890pF
TypeN-Channel

Technical details

N-Channel 20V 6.5A 1.3W Surface Mount SOT-23

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