R+O HL3415W

R+O · FETs & Power MOSFETs · MPN HL3415W

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Specifications

Gate Charge(Qg)11nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))620mV
Pd - Power Dissipation1.3W
RDS(on)30mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)88pF
Number1 P-Channel
Input Capacitance(Ciss)1.18nF

Technical details

20V 5A 620mV 1.3W 30mΩ@4.5V 1 P-Channel SOT-23-3L Single FETs, MOSFETs RoHS

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