R+O HL3415A

R+O · FETs & Power MOSFETs · MPN HL3415A

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Specifications

Gate Charge(Qg)11nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)5.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))620mV
Pd - Power Dissipation1.3W
RDS(on)31mΩ@4.5V;41mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)88pF
Number1 P-Channel
Input Capacitance(Ciss)1.18nF
TypeP-Channel

Technical details

P-Channel 20V 5.6A 1.3W Surface Mount SOT-23

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