R+O HL3407W6

R+O · FETs & Power MOSFETs · MPN HL3407W6

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)55mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)583pF

Technical details

30V 4.1A 1.5V 1.2W 55mΩ@10V 1 P-Channel SOT-23-6L Single FETs, MOSFETs RoHS

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