R+O HL3407W

R+O · FETs & Power MOSFETs · MPN HL3407W

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)55mΩ@10V
Input Capacitance(Ciss)582pF
TypeP-Channel

Technical details

30V 4.2A 1.5V 1.2W 55mΩ@10V P-Channel SOT-23-3L Single FETs, MOSFETs RoHS

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