R+O HL3407A

R+O · FETs & Power MOSFETs · MPN HL3407A

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
RDS(on)40mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)70pF
Number1 P-Channel
Input Capacitance(Ciss)572pF
TypeP-Channel

Technical details

P-Channel 30V 4.1A 1.2W Surface Mount SOT-23

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