R+O HL3139KT

R+O · FETs & Power MOSFETs · MPN HL3139KT

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)1.24nC@4.5V
Current - Continuous Drain(Id)700mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation190mW
RDS(on)450mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)9pF
Number1 P-Channel
Input Capacitance(Ciss)113pF

Technical details

20V 700mA 700mV 190mW 450mΩ@4.5V 1 P-Channel SOT-523 Single FETs, MOSFETs RoHS

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