R+O HL3139K

R+O · FETs & Power MOSFETs · MPN HL3139K

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)1.24nC@4.5V
Current - Continuous Drain(Id)700mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))660mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)400mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)113pF

Technical details

20V 700mA 660mV 1W 400mΩ@4.5V 1 P-Channel SOT-23 Single FETs, MOSFETs RoHS

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