R+O HL3134KD

R+O · FETs & Power MOSFETs · MPN HL3134KD

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Specifications

Configuration-
Drain to Source Voltage20V
Gate Charge(Qg)1.24nC@4.5V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)750mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation150mW
RDS(on)190mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)15pF
Number-
Input Capacitance(Ciss)68pF

Technical details

20V 750mA 750mV 150mW 190mΩ@4.5V N-Channel DFN1006-3L Single FETs, MOSFETs RoHS

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