R+O · FETs & Power MOSFETs · MPN HL2319
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| Gate Charge(Qg) | 6.4nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 350mW |
| RDS(on) | 85mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF |
| Input Capacitance(Ciss) | 620pF |
| Type | P-Channel |
40V 3A 1.6V 350mW 85mΩ@10V P-Channel SOT-23 Single FETs, MOSFETs RoHS