R+O HL2312

R+O · FETs & Power MOSFETs · MPN HL2312

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Specifications

Gate Charge(Qg)6nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)82pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))620mV
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)19.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)418pF
TypeN-Channel

Technical details

N-Channel 20V 5.5A 1.2W Surface Mount SOT-23

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