R+O HL2309A

R+O · FETs & Power MOSFETs · MPN HL2309A

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)11nC@10V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.65V
Pd - Power Dissipation1.5W
RDS(on)170mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)26pF
Number1 P-Channel
Input Capacitance(Ciss)495pF

Technical details

60V 2A 1.65V 1.5W 170mΩ@10V 1 P-Channel SOT-23 Single FETs, MOSFETs RoHS

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