R+O HL2309

R+O · FETs & Power MOSFETs · MPN HL2309

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)5.4nC@10V
Output Capacitance(Coss)32pF
Current - Continuous Drain(Id)1.25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)275mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)380pF
TypeP-Channel

Technical details

P-Channel 60V 1.25A 1.25W Surface Mount SOT-23

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