R+O HL2015

R+O · FETs & Power MOSFETs · MPN HL2015

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)4.5nC@4.5V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))620mV
Pd - Power Dissipation700mW
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)120mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)327pF

Technical details

20V 2A 620mV 700mW 120mΩ@4.5V 1 P-Channel SOT-23 Single FETs, MOSFETs RoHS

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