R+O · FETs & Power MOSFETs · MPN HL1N20W
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| Gate Charge(Qg) | 8nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 780mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| Input Capacitance(Ciss) | 538pF |
| Type | N-Channel |
200V 1A 2.6V 1.5W 780mΩ@10V N-Channel SOT-23-3L Single FETs, MOSFETs RoHS