R+O HK8EN015SG

R+O · FETs & Power MOSFETs · MPN HK8EN015SG

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Specifications

Drain to Source Voltage85V
Gate Charge(Qg)195nC@10V
Current - Continuous Drain(Id)390A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)812pF
RDS(on)1mΩ@10V
Input Capacitance(Ciss)12.829nF@40V
TypeN-Channel

Technical details

85V 390A 3V 500W 1mΩ@10V N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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