R+O HK12N030SG

R+O · FETs & Power MOSFETs · MPN HK12N030SG

No reviews yet — be the first to review R+O HK12N030SG.

Specifications

Drain to Source Voltage120V
Gate Charge(Qg)175nC@10V
Current - Continuous Drain(Id)300A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation320W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.563nF
TypeN-Channel

Technical details

120V 300A 3.3V 320W 1.9mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs