R+O HK06N020SG

R+O · FETs & Power MOSFETs · MPN HK06N020SG

No reviews yet — be the first to review R+O HK06N020SG.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)105nC@10V
Current - Continuous Drain(Id)330A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation355W
RDS(on)1.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)230pF
Number1 N-channel
Input Capacitance(Ciss)7.2nF
TypeN-Channel

Technical details

60V 330A 3V 355W 1.3mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs