R+O HK04N013SG

R+O · FETs & Power MOSFETs · MPN HK04N013SG

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)85nC@10V
Current - Continuous Drain(Id)250A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation128W
RDS(on)1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)169pF
Input Capacitance(Ciss)5.75nF@20V
TypeN-Channel

Technical details

40V 250A 3V 128W 1mΩ@10V N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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