R+O HK04N010SG

R+O · FETs & Power MOSFETs · MPN HK04N010SG

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)135.6nC@10V
Current - Continuous Drain(Id)370A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Pd - Power Dissipation297W
Reverse Transfer Capacitance (Crss@Vds)255pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.25nF
TypeN-Channel

Technical details

40V 370A 2.9V 297W 1.2mΩ@10V 1 N-channel N-Channel TOLL Single FETs, MOSFETs RoHS

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