R+O · FETs & Power MOSFETs · MPN HK04N010SG
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 135.6nC@10V |
| Current - Continuous Drain(Id) | 370A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 297W |
| Reverse Transfer Capacitance (Crss@Vds) | 255pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.25nF |
| Type | N-Channel |
40V 370A 2.9V 297W 1.2mΩ@10V 1 N-channel N-Channel TOLL Single FETs, MOSFETs RoHS