R+O · FETs & Power MOSFETs · MPN HJ8205
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| Gate Charge(Qg) | 6.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 164pF |
| Current - Continuous Drain(Id) | 4.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 138pF |
| RDS(on) | 30mΩ@4V;46mΩ@2.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 550pF |
| Type | N-Channel |
N-Channel 20V 4.3A 1.25W Surface Mount SOT-23-6L