R+O · FETs & Power MOSFETs · MPN HD510N110SG
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| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 89W |
| RDS(on) | 11mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.355nF |
100V 60A 1.9V 89W 11mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS