R+O HD510N075SG

R+O · FETs & Power MOSFETs · MPN HD510N075SG

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Specifications

Gate Charge(Qg)67nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation92W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)6.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.069nF

Technical details

100V 70A 1.7V 92W 6.2mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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