R+O · FETs & Power MOSFETs · MPN HD510N060SG
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 4.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.168nF |
100V 100A 1.8V 150W 4.5mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS