R+O · FETs & Power MOSFETs · MPN HD508N052SG
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 4.2mΩ@10V |
| Input Capacitance(Ciss) | 3.818nF@40V |
| Type | N-Channel |
80V 110A 3V 120W 4.2mΩ@10V N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS