R+O HD508N052SG

R+O · FETs & Power MOSFETs · MPN HD508N052SG

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)42nC@10V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)4.2mΩ@10V
Input Capacitance(Ciss)3.818nF@40V
TypeN-Channel

Technical details

80V 110A 3V 120W 4.2mΩ@10V N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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