R+O HD506N330S

R+O · FETs & Power MOSFETs · MPN HD506N330S

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)20.9nC
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation26W
RDS(on)22mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)56pF
Number1 N-channel
Input Capacitance(Ciss)900pF
TypeN-Channel

Technical details

N-Channel 60V 20A 26W Surface Mount PDFN-8L(5x6)

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