R+O · FETs & Power MOSFETs · MPN HD506N100SG
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 16nC@10V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.21nF |
| Type | N-Channel |
60V 55A 1.8V 60W 13mΩ@10V 1 N-channel N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS